Browse TI's portfolio of award-winning high-speed gallium nitride (GaN) power devices enabling high power density and design simplicity, available in single and dual-channel low-side as well as high-side/low-side configurations. The operation of power switching systems based on Gallium Nitride (GaN) and Silicon Carbide (SiC) metal oxide field effect transistors (MOSFETs) were presented under the influence of very low temperatures ranging from (−173 °C) up-to (+25 °C). The Gallium Nitride Power MOSFETS, are the unique technology design advantage of AGD Productions, and are the key to the reference level performance of all AGD amplifiers. With the seamless ability to drive any load, “THE AUDION” can deliver an unmatched sonic experience that only SET designs have been able to provide so far.

1. Gallium Nitride Mosfet
2. Gallium Nitride Manufacturers
3. Gan Transistor

The AGD Vivace Monoblock, is the most advanced Hi-End Power Amplifier in the market.First to use the unique GaNTube™ technology with Gallium Nitride Power-Stage integrated in a Vacuum Tube. The Gallium nitride components are the key to the reference level performance of the AGD Vivace Monoblocks.
To achieve the highest-performance in audio reproduction, switching topologies must achieve nearly ideal switching waveforms, completely oscillation-free, to minimize distortion but most importantly, to preserve the harmonic content present in the original input signal and avoid the superimposition of any additional artifacts that alter the overall spectrum and the spatiality of the music reproduction.The Gallium Nitride power MOSFETS used in the GaNTubeTM power stage, simplifies this challenge through its ability to efficiently switch at much higher slew rates than any silicon based power MOSFET, with almost perfect (book-like) behavior and oscillation free switching.

Gallium Nitride Mosfet

Design Philosophy

Product key office for mac 2011. With the seamless ability to drive any loudspeakers, 200W of power, 48,000µF of super audio grade capacitor reservoir, and the fastest slew-rate, the GaNTube™ Technology delivers the purest sonic experience.
Thanks to the Gallium-Nitride power stage intrinsic characteristics, the virtually stray-inductance free package, and a state of the art layout of the power module, the rise time and fall time of the Vivace's GaNTubeTM power stage are fully symmetrical at ~15ns. The output waveform at the switching node of the Gallium-Nitride power stage (pre-LC filter) is completely oscillation free even with a slew rate of 3700V/µs!

This oscilloscope snap-shot of the output power stage half-bridge switching node, is a dramatic evidence of the tremendous difference in switching speed between the Gallium Nitride Power MOSFET and the state of the art Silicon Power MOSFET equivalent.

The combination of low noise design technique implemented and the best practice for the internal board layout, the RF quality BNC connectors for the analog signals, are the key contributors of the excellent noise floor of the Vivace Monoblocks and extremely low distortion.

Main Features & Characteristics:

• Single Channel Class-D Amplifier
• Fully integrated in Vacuum Tube Enclosure
• Gallium Nitride MOSFET Power Stage
• IRS20957 Controller PWM IC
• Up to 200W 4Ω
• Up to 768KHz PWM.
• ≥ 94% Efficiency
• ≤ -120db
• OVT, OVC and DC protection

AGD Vivace GaN

The amps can be feed balanced or through RCA-inputs. An input selector, toogles the signal input feed from the connectors to the analog board. The power inlet is high-grade quality with medical standard EMI filter and with voltage selector for operation Speaker terminals are simply made, effective and can handle cables of large cross sections.

Technical Specs

PARAMETERS
• Nominal Output Power at 0.01% THD+N, 20Hz÷20KHz, 8Ω
• THD+N 10W/1KHz
• Maximum Output Power at 0.1% THD+N, 1KHz, , 4Ω
• Bandwidth ±3dB
• Efficiency%
• Output Noise (A-weighted)
• PWM Frequency
• Dynamic Range
• Dimension
• Weight
• Input Voltage

GaNTube^TM
• 100W
• <0.005%
• 200W
• 5Hz÷100KHz
• >94%
• ≤ 45μV
• Up to 768KHz
• 120dB
• 11'x11'x5' (279x279x127mm)
• 22lbs (10kg)
• 110-240V (user selectable)

Four Terminal Gallium Nitride MOSFETs

Abstract

All reported gallium nitride (GaN) transistors to date have been three-terminal devices with source, drain, and gate electrodes. In the case of GaN MOSFETs, this leaves the bulk of the device at a floating potential which can impact device threshold voltage. In more traditional silicon-based MOSFET fabrication a bulk contact can be made on the back side of the silicon wafer. For GaN grown on sapphire substrates, however, this is not possible and an alternate, front-side bulk contact must be investigated. GaN is a III-V, wide band gap semiconductor that as promising material parameters for use in high frequency and high power applications. Possible applications are in the 1 to 10 GHz frequency band and power inverters for next generation grid solid state transformers and inverters. GaN has seen significant academic and commercial research for use in Heterojunction Field Effect Transistors (HFETs). These devices however are depletion-mode, meaning the device is considered 'on' at zero gate bias. A MOSFET structure allows for enhancement mode operation, which is normally off. This mode is preferrable in high power applications as the device has lower off-state power consumption and is easier to implement in circuits. Proper surface passivation of seminconductor surface interface states is an important processing step for any device. Preliminary research on surface treatments using GaN wet etches and depletion-mode GaN devices utilizing this process are discussed. Devices pretreated with potassium pursulfate prior to gate dielectric deposition show significant device improvements. This process can be applied to any current GaN FET. Enhancement-mode GaN MOSFETs were fabricated on magnesium doped p-type Wurtzite gallium nitride grown by Metal Organic Chemical Vapor Deposition (MOCVD) on c-plane sapphire substrates. Devices utilized ion implant source and drain which was activated under NH3 overpressure in MOCVD. Also, devices were fabricated with a SiO2 gate dielectric and metal gate. Preliminary devices exhibited high GaN-oxide interface state density, Dit, on the order of 1013 cm-2· eV-1. Additional experiments and device fabrication was focused on improving device performance through optimization of the ion implantation activation anneal as well as incorporation of a bulk p-type ohmic contact and migration to a thicker, lower defect density, HVPE-grown template substrate. The first reported MOSFET on HVPE grown GaN substrates (templates) is reported with peak measured drain current of 1.05 mA/mm and a normalized transconductance of 57 muS/mm. Fabricated devices exhibited large (greater than 1 muA) source-to-drain junction leakage which is attributed to low activated doping density in the MOCVD-grown p-type bulk. MOSFETs fabricated on template substrates show more than twice the measured drain current as similar devices fabricated on traditional MOCVD GaN on sapphire substrates for the same bias conditions. Also, template MOSFETs have decreased gate leakage which allowed for a much greater range of operation. This performance increase is attributed to a more than doubled effective channel mobility on template GaN MOSFETs due to decreased crystal defect scattering when compared to a MOCVD-grown GaN-on-sapphire MOSFET. Fabricated MOSFETs also exhibit decreased interface state density with lower bound of 2.2x1011 cm-2·eV-1 when compared to prelimary MOSFETs. This decrease is associated with the use of a sacrificial oxide cap during source/drain activation. Suggested work for continued research is also presented which includes experiments to improve source/drain ion implantation profile, utilization of selective area growth for the active area, improved n- and p-type ohmic contact resistance and investigation of alternate oxides.

Gallium Nitride Manufacturers

Gan Transistor

• Engineering, Electronics and Electrical;Nanotechnology;Engineering, Materials Science